5

Infrared and Raman spectra of reactively sputtered amorphous GeNxH film

Year:
1990
Language:
english
File:
PDF, 179 KB
english, 1990
8

Effects of annealing on the electrical conductivity of C60 films

Year:
1995
Language:
english
File:
PDF, 594 KB
english, 1995
10

A study of phase transformation between diamond and graphite in P-T diagram of carbon

Year:
1994
Language:
english
File:
PDF, 373 KB
english, 1994
11

Interface properties of a-Si:Ha-SiCx:H superlattice

Year:
1995
Language:
english
File:
PDF, 477 KB
english, 1995
12

Microstructure of

Year:
1994
Language:
english
File:
PDF, 960 KB
english, 1994
20

Injection electroluminescence in ITO/a-Si:H structure

Year:
1988
Language:
english
File:
PDF, 1.98 MB
english, 1988
23

A new method to estimate the ability of forming amorphous solids

Year:
1987
Language:
english
File:
PDF, 124 KB
english, 1987
24

ESR and IR studies on P-doped a-Si:H/a-Si:H junctions

Year:
1988
Language:
english
File:
PDF, 209 KB
english, 1988
26

Study on Defects in Reactively Sputtered a-GeNx: H Films

Year:
1989
Language:
english
File:
PDF, 129 KB
english, 1989
28

Boron diffusion in device-like B-doped a-SiC:H/a-Si:H heterojunction

Year:
1990
Language:
english
File:
PDF, 169 KB
english, 1990
29

ESR study on annealing behavior of reactively sputtered a-GeNx:H films

Year:
1990
Language:
english
File:
PDF, 144 KB
english, 1990
35

Electron Spin Resonance and Raman Spectra of Cubic Boron Nitride Crystals

Year:
1991
Language:
english
File:
PDF, 106 KB
english, 1991
37

Doping effect on the hydrogen content of a-Si1–x Cx :H films

Year:
1986
Language:
english
File:
PDF, 135 KB
english, 1986
39

Interface Defects in Sputtered a-Si:H/a-C:H Multilayers

Year:
1987
Language:
english
File:
PDF, 144 KB
english, 1987
40

Theoretical study of the Raman spectrum in a-Si1−xNx: H Films

Year:
1989
Language:
english
File:
PDF, 258 KB
english, 1989
44

Optical properties of GD a-Si:H/a-Si1−xCx:H superlattices

Year:
1988
Language:
english
File:
PDF, 1.70 MB
english, 1988